Universal Parameter Evaluating SiO2/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy
Abstract:
Oxidized both silicon-face (Si-face) and carbon-face (C-face) wafers with various post-oxidation-annealing conditions were measured by scanning nonlinear dielectric microscopy (SNDM) and method for evaluating SiO2/SiC interface quality using SNDM was investigated. We found that the normalized standard deviation of SNDM image was good parameter to evaluate SiO2/SiC interface of Si and C-face. SNDM measurement does not need electrode fabrication to measure C–V curve, but needs just scan on the oxidized wafer with conductive tip, which is easier and quicker. This technique enables us to quickly examine the effect of variation of process parameters in MOS fabrication and to effectively reduce the time needed for R&D cycle.
Periodical:Materials Science Forum (Volume 897)
Edited by:
Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis
Pages: 159-162
DOI: https://doi.org/10.4028/www.scientific.net/MSF.897.159
Citation: Cite this paper
Online since: May 2017
Authors:Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Yuji Kiuchi, Hajime Okumura, Yasuo Cho*
Keywords:Scanning Nonlinear Dielectric Microscopy, SiO2/SiC Interface
References
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