Abstract:

Oxidized both silicon-face (Si-face) and carbon-face (C-face) wafers with various post-oxidation-annealing conditions were measured by scanning nonlinear dielectric microscopy (SNDM) and method for evaluating SiO₂/SiC interface quality using SNDM was investigated. We found that the normalized standard deviation of SNDM image was good parameter to evaluate SiO₂/SiC interface of Si and C-face. SNDM measurement does not need electrode fabrication to measure C–V curve, but needs just scan on the oxidized wafer with conductive tip, which is easier and quicker. This technique enables us to quickly examine the effect of variation of process parameters in MOS fabrication and to effectively reduce the time needed for R&D cycle.

Periodical:Materials Science Forum (Volume 897)

Edited by:

Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis

Pages: 159-162

DOI: https://doi.org/10.4028/www.scientific.net/MSF.897.159

Citation: Cite this paper

Online since: May 2017

Authors:Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Yuji Kiuchi, Hajime Okumura, Yasuo Cho*

Keywords:Scanning Nonlinear Dielectric Microscopy, SiO₂/SiC Interface

References 

[1] G. Liu, B.R. Tuttle and S. Dhar, Appl. Phys. Rev., Vol. 2, (2015), 021307.

[2] Y. Cho, A. Kirihara and T. Saeki, Rev. Sci. Instrum., Vol. 67, No. 6 (1996), pp.2297-2303.

[3] N. Chinone, R. Kosugi, Y. Tanaka , S. Harada, H. Okumura and Y. Cho, Materials Science Forum, Vol. 858, (2016) pp.469-472.

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