Appl. Phys. Lett. 98, 233501 (2011); https://doi.org/10.1063/1.3597154 Alpana Nayak^a), Tohru Tsuruoka, Kazuya Terabe, Tsuyoshi Hasegawa, and Masakazu Aono

ABSTRACT

Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu2SCu2S-based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.Part of this work was conducted under the Key-Technology Research Project, “Atomic Switch Programmed Device,” supported by the MEXT, and the Strategic Japanese-German Cooperative Program, “Faradaic currents and ion transfer numbers in electrochemical atomic switches,” supported by JST. We would like to thank Prof. J. M. Ruitenbeek and Dr. M. Morales-Masis for fruitful discussions on the growth measurement.

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Appl. Phys. Lett. 99, 203108 (2011); https://doi.org/10.1063/1.3662390 Takeo Ohno^1,2, a), Tsuyoshi Hasegawa^1,2, Alpana Nayak¹, Tohru Tsuruoka^1,2, James K. Gimzewski^1,3, and Masakazu Aono¹

ABSTRACT

Memorization caused by the change in conductance in a Ag₂S gap-type atomic switch was investigated as a function of the amplitude and width of input voltage pulses (V_in). The conductance changed little for the first few V_in, but the information of the input was stored as a redistribution of Ag-ions in the Ag₂S, indicating the formation of sensory memory. After a certain number of V_in, the conductance increased abruptly followed by a gradual decrease, indicating the formation of short-term memory (STM). We found that the probability of STM formation depends strongly on the amplitude and width of V_in, which resembles the learning behavior of the human brain.Part of this work was conducted under the Key-Technology Research Project, “Atomic Switch Programmed Device,” supported by MEXT, and the Strategic Japanese–German Cooperative Program, “Faradaic currents and ion transfer numbers in electrochemical atomic switches,” supported by JST.

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Appl. Phys. Lett. 111, 061602 (2017); https://doi.org/10.1063/1.4990865 Norimichi Chinone¹, Alpana Nayak¹,  Ryoji Kosugi², Yasunori Tanaka², Shinsuke Harada²,  Hajime Okumura², and  Yasuo Cho^1,a)

ABSTRACT

A strong positive correlation was found between the trap density (D_it) at the SiO₂/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The D_it value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO₂/SiC interface quality. Using this measure, a quick evaluation of D_it using SNDM is possible.This work was supported in part by a Grand-in-Aid for Scientific Research S (Grant No. 16H06360).

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