• Tsuyoshi Hasegawa, 
• Alpana Nayak, 
• Takeo Ohno, 
• Kazuya Terabe, 
• Tohru Tsuruoka, 
• James K. Gimzewski & 
• Masakazu Aono 

Applied Physics A volume 102, pages811–815 (2011)Cite this article

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Abstract

We demonstrate memristive operations using gap-type Ag₂S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag₂S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

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